photodiode si photodiode highly reliable photodiode for vuv detection S10043 S10043 is a si photodiode designed to detect high-power arf excimer lasers (193 nm) with high accuracy and stability. by combin ing our newly developed technologies for forming ultra-thin pn junctions and high-reliability ultra-thin metal films, S10043 shows almo st no change in sensitivity even after exposure to arf excimer laser beam of 1 kj/cm 2 . features applications l greatly improved sensitivity stability even after exposure to arf ( =193 nm) excimer laser l windowless package * 1 l arf excimer laser detection l various uv detection 1 absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max. 5 v operating temperature * 2 topr -20 to +60 c storage temperature * 2 tstg -55 to +80 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 190 to 1000 - nm peak sensitivity wavelength p - 720 - nm photo sensitivity s =193 nm 10 15 - ma/w dark current i d v r =10 mv - 0.1 1 na terminal capacitance ct v r =0 v, f=10 khz - 4 - nf rise time tr v r =0 v, r l =1 k ? 10 to 90 % - 9 - s *1: S10043 uses a windowless package with no protection on the photodiode chip, and is shipped with the package held with glass tape. remove the glass tape when using. *2: no condensation
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2006 hamamatsu photonics k.k. cat. no. kspd1072e01 jun. 2006 dn si photodiode S10043 2 wavelength (nm) 0 100 400 700 200 500 800 300 600 900 1000 (typ. ta=25 ?c) 0.20 0.25 0.10 0.15 0.05 photo sensitivity (a/w) spectral response kspdb0257ea dimensional outline (unit: mm) exposure (kj/cm 2 ) 60 0 0.2 0.4 0.6 0.8 1 (typ. =193 nm) 105 65 70 75 80 85 90 95 100 rate of change (%) s8552 (conventional type) S10043 sensitivity change after exposure to arf laser kspdb0258ea handling precautions handle the photodiodes in a clean room. never touch the photodiode chip surface and wire bonding. wear dust-proof gloves and dust-proof mask. use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface. do not clean the photodiodes by any method other than air blow. anode terminal mark photosensitive surface 16.5 0.2 y x 15.0 0.15 2.15 0.1 (10.5) 0.75 0.3 15.1 0.3 12.5 0.2 13.7 0.3 active area 10 10 (2 ) 0.5 fe ni co alloy chip position accuracy with respect to the package center -0.3 x, y +0.3 black ceramic tape kspda0171ea
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